The penetration of gallium nitride-on-silicon (GaN-on-Si) wafers into the LED market is
forecast to increase at a CAGR of 69% from 2013 to 2020, by which time they will account for 40% of all GaN LEDs manufactured, according to a new report from IHS.
In 2013, 95% of GaN LEDs will be manufactured on sapphire wafers, while only 1% will be manufactured on silicon wafers. The growth in the manufacturing of GaN-on-Si LEDs between 2013 and 2020 will take market share from both sapphire and silicon carbide wafers.
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